Heng‐Kuang Lin

An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier

J.B. Hacker, J. Bergman, G. Nagy et al. · IEEE Microwave and Wireless Components Letters · 2004 · 79 citations

Highly conductive alumina-added ZnO ceramic target prepared by reduction sintering and its effects on the properties of deposited thin films by direct current magnetron sputtering

Hao Huang, Huan-Chien Tung, Chun‐Wei Chiu et al. · Thin Solid Films · 2010 · 38 citations

Materials Science, Materials Engineering, Engineering +5

An ultra-low power InAs/AlSb HEMT W-band low-noise amplifier

J.B. Hacker, J. Bergman, G. Nagy et al. · IEEE MTT-S International Microwave Symposium Digest, 2005. · 2005 · 37 citations

Electrical Engineering, Engineering, Rf Semiconductor +7

DC and RF characterization of AlGaN/GaN HEMTs with different gate recess depths

Heng‐Kuang Lin, Fan‐Hsiu Huang, Hsiang-Lin Yu · Solid-State Electronics · 2010 · 26 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +6

InAs/AlSb HFETs with f/sub τ/ and f/sub max/ above 150 GHz for low-power MMICs

J. Bergman, G. Nagy, G.J. Sullivan et al. · 2003 · 25 citations

Engineering, Radio Frequency, Semiconductor Device +16