Harry Chuang

13.3 A 22nm 32Mb Embedded STT-MRAM with 10ns Read Speed, 1M Cycle Write Endurance, 10 Years Retention at 150°C and High Immunity to Magnetic Field Interference

Yu-Der Chih, Yi-Chun Shih, Chia-Fu Lee et al. · 2020 · 93 citations

Engineering, Computer Engineering, Electrical Engineering +9

22nm STT-MRAM for Reflow and Automotive Uses with High Yield, Reliability, and Magnetic Immunity and with Performance and Shielding Options

W. J. Gallagher, Eric Chien, Tien-Wei Chiang et al. · 2019 · 81 citations

Engineering, Computer Engineering, Electrical Engineering +14

SAPIENS: A 64-kb RRAM-Based Non-Volatile Associative Memory for One-Shot Learning and Inference at the Edge

Haitong Li, Wei-Chen Chen, Akash Levy et al. · IEEE Transactions on Electron Devices · 2021 · 68 citations

Computing, Computer Engineering, Computer Science +17

33.1 A 16nm 32Mb Embedded STT-MRAM with a 6ns Read-Access Time, a 1M-Cycle Write Endurance, 20-Year Retention at 150°C and MTJ-OTP Solutions for Magnetic Immunity

Po-Hao Lee, Chia-Fu Lee, Yi-Chun Shih et al. · 2023 · 58 citations

Engineering, Computer Engineering, Electrical Engineering +17

A 22nm 96KX144 RRAM Macro with a Self-Tracking Reference and a Low Ripple Charge Pump to Achieve a Configurable Read Window and a Wide Operating Voltage Range

Chung-Cheng Chou, Zheng-Jun Lin, Chien-An Lai et al. · 2020 · 57 citations

Engineering, Computer Engineering, Electrical Engineering +16