Hideaki Ishikawa

Si Atomic-Planar-Doping in GaAs Made by Molecular Beam Epitaxy

Shigehiko Sasa, Shunichi Muto, Kazuhiro Kondo et al. · Japanese Journal of Applied Physics · 1985 · 54 citations

Si Planar Doping, Electrical Engineering, Si Atomic-planar-doping +11

Calculation of electronic structure and photoabsorption spectra of monosilane molecules SiH4, SiF4, and SiCl4

Hideaki Ishikawa, Kazumi Fujima, Hirohiko Adachi et al. · The Journal of Chemical Physics · 1991 · 48 citations

Engineering, Photoabsorption Spectra, Theoretical Inorganic Chemistry +17

A study of wavy falling film flow on micro-baffled plate

Hideaki Ishikawa, Shinichi Ookawara, Shiro Yoshikawa · Chemical Engineering Science · 2016 · 29 citations

Engineering, Microfabrication, Mechanics +6

MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source

Kazuhiro Kondo, Hideaki Ishikawa, Shigehiko Sasa et al. · Japanese Journal of Applied Physics · 1986 · 24 citations

Materials Engineering, Semiconductors, Electrical Engineering +13

A New Heterostructure for 2DEG System with a Si Atomic-Planar-Doped AlAs-GaAs-AlAs Quantum Well Structure Grown by MBE

S. Hiyamizu, Sigehiko Sasa, Tomonori Ishikawa et al. · Japanese Journal of Applied Physics · 1985 · 21 citations

Wide-bandgap Semiconductor, Engineering, Sheet Resistivity +16