D. K. Nelson

Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC

V. Yu. Davydov, N. S. Averkiev, I. N. Goncharuk et al. · Journal of Applied Physics · 1997 · 376 citations

Engineering, Materials Engineering, Materials Science +17

Photoluminescence of carbon dots from mesoporous silica

D. K. Nelson, B. S. Razbirin, A. N. Starukhin et al. · Optical Materials · 2016 · 36 citations

Natural Sciences, Materials Engineering, Materials Science +12

Production of gas phase zinc oxide nanoclusters by pulsed laser ablation

Igor Ozerov, Alexander V. Bulgakov, D. K. Nelson et al. · Applied Surface Science · 2005 · 29 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +14

Highly doped p-type 3C–SiC on 6H–SiC substrates

A. А. Lebedev, P. L. Abramov, E. V. Bogdanova et al. · Semiconductor Science and Technology · 2008 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Absorption spectra of GaN: film characterization by Urbach spectral tail and the effect of electric field

M. A. Jacobson, O. V. Konstantinov, D. K. Nelson et al. · Journal of Crystal Growth · 2001 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +17