In this work, an enhancement-mode (E-mode) p-channel GaN metal-oxide-semiconductor field-effect transistor (p-MOSFET) with a maximum ON-state current (

${I}_{\text {ON}}$

) density of 10.5 mA/mm, threshold voltage (

${V}_{\text {TH}}$

) of −2.45 V, and

${I}_{\text {ON}}/{I}_{\text {OFF}}$

ratio of

$10^{{8}}$

is demonstrated on a commercial GaN wafer designed on a p-GaN HEMT. Furthermore, we present a novel E-mode p-FET featuring an AlN insertion layer within the p-GaN layer. The AlN layer introduces extra capacitance in the conducting channel and decreases the body factor m of devices. The p-GaN/AlN/p-GaN/AlGaN structure reduces the equivalent channel capacitance, achieving a minimum point-by-point subthreshold swing (SS) of 60 mV/dec. Compared with that of the conventional p-GaN channel FET, the SS decreases from 225 to 105 mV/dec over three orders, the

${V}_{\text {TH}}$

shifts to −3.05 V, the

${I}_{\text {ON}}/{I}_{\text {OFF}}$

ratio increases to

$2 \times 10^{{8}}$

, and the device also has an ultralow off-state leakage current in the range of

$10 \; ^{-{8}}$

mA/mm. The proposed structure is compelling for GaN-based complementary metal-oxide-semiconductor (CMOS) logic and power devices.

#	Concept	H-Index	Publications	Citations
1	Engineering	2	2	75
2	Applied Physics	2	2	75
3	Materials Science	2	2	75
4	Natural Sciences	1	1	26
5	Chemistry	1	1	26

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