Jérémie Lefèvre

Silicon threshold displacement energy determined by photoluminescence in electron-irradiated cubic silicon carbide

Jérémie Lefèvre, Jean‐Marc Costantini, S. Esnouf et al. · Journal of Applied Physics · 2009 · 36 citations

Engineering, Point Defect Formation, Silicon Carbide +16

Thermal stability of irradiation-induced point defects in cubic silicon carbide

Jérémie Lefèvre, Jean‐Marc Costantini, S. Esnouf et al. · Journal of Applied Physics · 2009 · 23 citations

Materials Engineering, Materials Science, Point Defects +13

Characterization of a silicon-related defect detected by its excited triplet state in electron-irradiated 3C-SiC

Jérémie Lefèvre, Jean‐Marc Costantini, Didier Gourier et al. · Physical Review B · 2011 · 17 citations

Paramagnetic Resonance, Engineering, Cavity Qed +19

Electron and proton irradiation effect on the minority carrier lifetime in SiC passivated p-doped Ge wafers for space photovoltaics

Charlotte Weiss, Seonyong Park, Jérémie Lefèvre et al. · Solar Energy Materials and Solar Cells · 2020 · 16 citations · Full text

Semiconductor Technology, Electrical Engineering, Engineering +7

Radiation hardness and post irradiation regeneration behavior of GaInAsP solar cells

R. Lang, Jonas Schön, Jérémie Lefèvre et al. · Solar Energy Materials and Solar Cells · 2020 · 16 citations · Full text

Materials Science, Electrical Engineering, Gainasp Solar Cells +10