Kwangsoo Kim

Material Choices for Tunnel Dielectric Layer and Gate Blocking Layer for Ferroelectric NAND Applications

Lance Fernandes, Prasanna Venkatesan Ravindran, Taeyoung Song et al. · IEEE Electron Device Letters · 2024 · 21 citations

Natural Sciences, Electrical Engineering, Materials Science +14

Understanding the Memory Window of Ferroelectric FET and Demonstration of 4.8-V Memory Window With 20-nm HfO₂

Yixin Qin, Zijian Zhao, Suhwan Lim et al. · IEEE Transactions on Electron Devices · 2024 · 16 citations

Engineering, Electrical Engineering, Materials Science +14

Clarifying the Role of Ferroelectric in Expanding the Memory Window of Ferroelectric FETs with Gate-Side Injection: Isolating Contributions from Polarization and Charge Trapping

Yixin Qin, Saikat Chakraborty, Zijian Zhao et al. · 2024 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

A Large Window Nonvolatile Transistor Memory for High-Density and Low-Power Vertical NAND Storage Enabled by Ferroelectric Charge Pumping

Zijian Zhao, Yixin Qin, Jiahui Duan et al. · IEEE Electron Device Letters · 2024 · 13 citations

Engineering, Computer Engineering, Electrical Engineering +14

Optimizing Memory Window for Ferroelectric Nand Applications: An Experimental Study on Dielectric Material Selection and Layer Positioning

Lance Fernandes, Prasanna Venkatesan Ravindran, Mengkun Tian et al. · IEEE Transactions on Electron Devices · 2024 · 13 citations

Engineering, Electrical Engineering, Materials Science +15