Oleg P. Pchelyakov

Silicon – germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures

Yu. B. Bolkhovityanov, Oleg P. Pchelyakov, S. I. Chikichev · Physics-Uspekhi · 2001 · 60 citations

Materials Science, Semiconductors, Physical Fundamentals +15

Silicon germanium epilayers: physical fundamentals of growing strained and fully relaxed heterostructures

Yu. B. Bolkhovityanov, Oleg P. Pchelyakov, S. I. Chikichev · Uspekhi Fizicheskih Nauk · 2001 · 25 citations · Full text

Initial stage growth of Ge x Si1−x layers and Ge quantum dot formation on Ge x Si1−x surface by MBE

A. I. Nikiforov, Serge A Teys, A.K. Gutakovsky et al. · Nanoscale Research Letters · 2012 · 18 citations · Full text

Formation of Ge-Sn nanodots on Si(100) surfaces by molecular beam epitaxy

V. I. Mashanov, Vladimir V. Ulyanov, A. I. Nikiforov et al. · Nanoscale Research Letters · 2011 · 15 citations · Full text

<title>Nanotechnologies in semiconductor electronics</title>

Oleg P. Pchelyakov, A. I. Toropov, V. P. Popov et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2002 · 14 citations

Engineering, Electron-beam Lithography, Semiconductor Electronics +17