Masakatsu Hoshi

Application of STM Nanometer-Size Oxidation Process to Planar-Type MIM Diode

Kazuhiko Matsumoto, Shu Takahashi, Masakatsu Hoshi et al. · Japanese Journal of Applied Physics · 1995 · 99 citations

Natural Sciences, Materials Engineering, Materials Science +16

Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices

Satoshi Tanimoto, Norihiko Kiritani, Masakatsu Hoshi et al. · Materials science forum · 2002 · 38 citations · Full text

Engineering, Materials Engineering, Materials Science +16

SiC Trench MOSFET with an Integrated Low Von Unipolar Heterojunction Diode

W.-X. Ni, Kenta Emori, Toshiharu Marui et al. · Materials science forum · 2014 · 20 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

New High-Voltage Unipolar Mode p<sup>+</sup> Si/n<sup>–</sup> 4H-SiC Heterojunction Diode

Tetsuya Hayashi, Hideaki Tanaka, Yoshio Shimoida et al. · Materials science forum · 2005 · 18 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs

Norihiko Kiritani, Masakatsu Hoshi, Satoshi Tanimoto et al. · Materials science forum · 2003 · 15 citations · Full text

Engineering, Electrical Engineering, Materials Science +12