Manvi Agrawal

GaN Schottky Metal–Semiconductor–Metal UV Photodetectors on Si(111) Grown by Ammonia-MBE

Ravikiran Lingaparthi, K. Radhakrishnan, N. Dharmarasu et al. · IEEE Sensors Journal · 2016 · 42 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors on 100-mm-Diameter Si(111) by Ammonia Molecular Beam Epitaxy

N. Dharmarasu, K. Radhakrishnan, Manvi Agrawal et al. · Applied Physics Express · 2012 · 21 citations

Materials Engineering, Semiconductors, Electrical Engineering +13

AlGaN/GaN HEMT-based high-sensitive NO₂ gas sensors

Akhil Ranjan, Manvi Agrawal, K. Radhakrishnan et al. · Japanese Journal of Applied Physics · 2019 · 18 citations · Full text

Electrical Engineering, Chemical Engineering, Engineering +13

Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering

Shashank Patwal, Manvi Agrawal, K. Radhakrishnan et al. · physica status solidi (a) · 2019 · 17 citations

Materials Science, Semiconductors, Electrical Engineering +14

Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si(111) by plasma assisted molecular beam epitaxy

Manvi Agrawal, K. Radhakrishnan, N. Dharmarasu et al. · Japanese Journal of Applied Physics · 2015 · 10 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +16