D.S.H. Chan

Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate

Nan Wu, Qingchun Zhang, Chunxiang Zhu et al. · Applied Physics Letters · 2004 · 143 citations

Engineering, Ge Substrate, Metal-oxide-semiconductor Capacitors +22

Conformation-Induced Electrical Bistability in Non-conjugated Polymers with Pendant Carbazole Moieties

Siew Lay Lim, Ling Ling, Eric Yeow Hwee Teo et al. · Chemistry of Materials · 2007 · 135 citations

Volatile Memory Behavior, Engineering, Smart Polymer +16

Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric

Nan Wu, Qingchun Zhang, Chunxiang Zhu et al. · Applied Physics Letters · 2004 · 114 citations

Surface Sih4 Annealing, High-k Gate Dielectric, Engineering +17

Wide memory window in graphene oxide charge storage nodes

Shuai Wang, Jing Pu, D.S.H. Chan et al. · Applied Physics Letters · 2010 · 97 citations

Engineering, Organic Electronics, Isolated Graphene Oxide +18

A novel single-device DC method for extraction of the effective mobility and source-drain resistances of fresh and hot-carrier degraded drain-engineered MOSFET's

Choon-Leong Lou, Wai‐Kin Chim, D.S.H. Chan et al. · IEEE Transactions on Electron Devices · 1998 · 61 citations

Device Modeling, Electrical Engineering, Engineering +13