Qiyuan Wei

Analysis of optical gain property in the InGaN/GaN triangular shaped quantum well under the piezoelectric field

Ziwen Yang, Rui Li, Qiyuan Wei et al. · Applied Physics Letters · 2009 · 69 citations

Wide-bandgap Semiconductor, Triangular Qws, Engineering +16

Misfit Strain Relaxation by Stacking Fault Generation in InGaN Quantum Wells Grown on<i>m</i>-Plane GaN

Alec M. Fischer, Zhihao Wu, Kewei Sun et al. · Applied Physics Express · 2009 · 67 citations

Wide-bandgap Semiconductor, Engineering, Misfit Strain Relaxation +16

Evidence of Two-Dimensional Hole Gas in p-Type AlGaN/AlN/GaN Heterostructures

Qiyuan Wei, Zhihao Wu, Kewei Sun et al. · Applied Physics Express · 2009 · 16 citations

Electron Holography, Wide-bandgap Semiconductor, Electrical Engineering +13

Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguiding layer design grown by metalorganic chemical vapordeposition

Jianping Liu, Yun Zhang, Zachary Lochner et al. · Journal of Crystal Growth · 2010 · 10 citations

Engineering, Applied Physics, Laser Applications +7