T. M. Al Tahtamouni - Concepedia

Author

T. M. Al Tahtamouni

Kansas State University ORCID

Also Known As

Lin, J.Y., T M Al tahtamouni, T. M. Al Tahtamouni, T. M. Al tahtamouni, Talal Mohammed Al Tahtamouni

Publications

553

Citations

H-Index

Concepts

All Affiliations

Kansas State University Texas Tech University Yarmouk University King Abdullah University of Science and Technology Qatar University

About

T. M. Al Tahtamouni is an author at Kansas State University specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	16	484
2	Applied Physics	15	16	484
3	Electrical Engineering	6	6	191
4	Chemistry	3	3	78
5	Chemical Engineering	1	1	15

T. M. Al Tahtamouni

Publications

499

Citations

H-Index

Page 1

	Year	Citations
Hybrid AlN–SiC deep ultraviolet Schottky barrier photodetectors R. Dahal, T. M. Al Tahtamouni, Zhaoyang Fan, Applied Physics Letters SemiconductorsMaterials ScienceElectrical EngineeringOptical MaterialsElectronic Devices	2007	52
AlN avalanche photodetectors R. Dahal, T. M. Al Tahtamouni, J. Y. Lin, Applied Physics Letters Wide-bandgap SemiconductorAluminium NitrideOptical MaterialsEngineeringOptoelectronic Devices	2007	49
Optical polarization in c-plane Al-rich AlN/Al<sub>x</sub>Ga<sub>1-x</sub>N single quantum wells T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang Applied Physics Letters Aluminium NitrideQuantum SciencePhotonicsOptical MaterialsPredominant Polarization Component	2012	46
Growth and photoluminescence studies of Al-rich AlN∕AlxGa1−xN quantum wells T. M. Al Tahtamouni, Neeraj Nepal, J. Y. Lin, Applied Physics Letters Polarization FieldsAluminium NitrideOptical MaterialsEngineeringOptoelectronic Devices	2006	44
Si-doped high Al-content AlGaN epilayers with improved quality and conductivity using indium as a surfactant T. M. Al Tahtamouni, A. Sedhain, J. Y. Lin, Applied Physics Letters Materials ScienceMaterials EngineeringSurface PitsWide-bandgap SemiconductorEngineering	2008	43
Correlation between biaxial stress and free exciton transition in AlN epilayers B. N. Pantha, Neeraj Nepal, T. M. Al Tahtamouni, Applied Physics Letters Aluminium NitrideEngineeringCrystal Growth TechnologyBiaxial StressFree Exciton Transition	2007	39
Photoluminescence properties of AlN homoepilayers with different orientations A. Sedhain, Neeraj Nepal, M. L. Nakarmi, Applied Physics Letters Materials ScienceAluminium NitrideSolid-state LightingEngineeringPhotoluminescence	2008	32
Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang AIP Advances Aluminium NitrideWide-bandgap SemiconductorEngineeringNanoelectronicsP-gan Contact Layer	2014	30
Influence of TMAl preflow on AlN epitaxy on sapphire Haiding Sun, Feng Wu, Young Jae Park, Applied Physics Letters Materials ScienceMaterials EngineeringAluminium NitrideEngineeringTmal Preflow Process	2017	24
High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors T. M. Al Tahtamouni, J. Y. Lin, H. X. Jiang Applied Physics Letters Aluminium NitrideShort Wavelength OpticOptical MaterialsEngineeringNanoelectronics	2012	23

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