A. Schäfer

Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors

Lars Knoll, Qing‐Tai Zhao, A. Nichau et al. · IEEE Electron Device Letters · 2013 · 196 citations · Full text

Semiconductors, Semiconductor Technology, Electrical Engineering +9

The influence of molecular aggregation on the device properties of organic light emitting diodes

P. Schouwink, A. Schäfer, Christian Seidel et al. · Thin Solid Films · 2000 · 88 citations

Organic Charge-transfer Compound, White Oled, Engineering +11

Strained Si and SiGe Nanowire Tunnel FETs for Logic and Analog Applications

Qing‐Tai Zhao, Simon Richter, C. Schulte‐Braucks et al. · IEEE Journal of the Electron Devices Society · 2015 · 85 citations · Full text

Engineering, Optoelectronic Devices, Integrated Circuits +16

Line and Point Tunneling in Scaled Si/SiGe Heterostructure TFETs

Matthias Schmidt, A. Schäfer, Renato Amaral Minamisawa et al. · IEEE Electron Device Letters · 2014 · 78 citations

Device Modeling, Semiconductor Technology, Electrical Engineering +8

Demonstration of improved transient response of inverters with steep slope strained Si NW TFETs by reduction of TAT with pulsed I-V and NW scaling

Lars Knoll, Qing‐Tai Zhao, A. Nichau et al. · 2013 · 66 citations · Full text

Sub Xmlns, Engineering, Integrated Circuits +17