I. Jabbari

Evidence of Poole-frenkel and Fowler-Nordheim tunneling transport mechanisms in leakage current of (Pd/Au)/Al0.22Ga0.78N/GaN heterostructures

I. Jabbari, M. Baïra, H. Mâaref et al. · Solid State Communications · 2020 · 32 citations

Wide-bandgap Semiconductor, Electrical Engineering, /Al0.22ga0.78n/gan Heterostructures +8

Schottky barrier inhomogeneity in (Pd / Au) Al0.22 Ga0.78N/GaN/SiC HEMT: Triple Gaussian distributions

I. Jabbari, M. Baïra, H. Mâaref et al. · Chinese Journal of Physics · 2021 · 16 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +9

C-DLTS interface defects in Al0.22Ga0.78N/GaN HEMTs on SiC: Spatial location of E2 traps

I. Jabbari, M. Baïra, H. Mâaref et al. · Physica E Low-dimensional Systems and Nanostructures · 2018 · 15 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +7

Correlation between Kink effect and trapping mechanism through H1 hole trap in Al0.22Ga0.78N/GaN/SiC HEMTs by current DLTS: field effect enhancement

I. Jabbari, M. Baïra, H. Mâaref · Applied Physics A · 2020 · 13 citations

Electrical Engineering, Engineering, Trapping Mechanism +7

Cryogenic investigation of the negative pinch-off voltage Vpinch-off, leakage current and interface defects in the Al0.22Ga0.78N/GaN/SiC HEMT

I. Jabbari, M. Baïra, H. Mâaref et al. · Microelectronics Reliability · 2020 · 10 citations