Concepedia

Pavel Bolshakov

PB

Statistics

Publications

10

Citations

459

H-Index

10

Active since

2017

Affiliations

The University of Texas at Dallas(Current)

University College Cork

Institute for Microelectronics and Microsystems

Pavel Bolshakov is an author at The University of Texas at Dallas specializing in applied physics, engineering, and electrical engineering.

ORCID

Top concepts

Publications per year

2017–2019

10

Publications

10

Evaluation of border traps and interface traps in HfO <sub>2</sub> /MoS <sub>2</sub> gate stacks by capacitance–voltage analysis

Peng Zhao, Ava Khosravi, Angelica Azcatl et al. · 2D Materials · 2018 · 93 citations · Full text

Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

Pavel Bolshakov, Peng Zhao, Angelica Azcatl et al. · Applied Physics Letters · 2017 · 70 citations

, , +13

Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics

Pavel Bolshakov, Ava Khosravi, Peng Zhao et al. · Applied Physics Letters · 2018 · 53 citations

, , +12

Contact Engineering for Dual-Gate MoS<sub>2</sub> Transistors Using O<sub>2</sub> Plasma Exposure

Pavel Bolshakov, Christopher M. Smyth, Ava Khosravi et al. · ACS Applied Electronic Materials · 2019 · 52 citations

, , +18

Probing Interface Defects in Top-Gated MoS<sub>2</sub> Transistors with Impedance Spectroscopy

Peng Zhao, Angelica Azcatl, Y. Y. Gomeniuk et al. · ACS Applied Materials & Interfaces · 2017 · 45 citations

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