Pavel Bolshakov

Evaluation of border traps and interface traps in HfO ₂ /MoS ₂ gate stacks by capacitance–voltage analysis

Peng Zhao, Ava Khosravi, Angelica Azcatl et al. · 2D Materials · 2018 · 96 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Improvement in top-gate MoS2 transistor performance due to high quality backside Al2O3 layer

Pavel Bolshakov, Peng Zhao, Angelica Azcatl et al. · Applied Physics Letters · 2017 · 71 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Dual-gate MoS2 transistors with sub-10 nm top-gate high-k dielectrics

Pavel Bolshakov, Ava Khosravi, Peng Zhao et al. · Applied Physics Letters · 2018 · 55 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Contact Engineering for Dual-Gate MoS₂ Transistors Using O₂ Plasma Exposure

Pavel Bolshakov, Christopher M. Smyth, Ava Khosravi et al. · ACS Applied Electronic Materials · 2019 · 52 citations

Engineering, Electrical Engineering, Materials Science +17

Probing Interface Defects in Top-Gated MoS₂ Transistors with Impedance Spectroscopy

Peng Zhao, Angelica Azcatl, Y. Y. Gomeniuk et al. · ACS Applied Materials & Interfaces · 2017 · 46 citations

Engineering, Electrical Engineering, Materials Science +17