Jianwei Ben - Concepedia

Author

Jianwei Ben

Changchun Institute of Optics, Fine Mechanics and Physics ORCID

Also Known As

J. Ben, Jian-wei BEN, JianWei Ben, Jianwei BEN, Jianwei Ben, Zhiming Shi

Publications

1.1K

Citations

H-Index

Concepts

All Affiliations

Changchun Institute of Optics, Fine Mechanics and Physics Chinese Academy of Sciences University of Chinese Academy of Sciences Changchun University of Technology Shenzhen University

About

Jianwei Ben is an author at Changchun Institute of Optics, Fine Mechanics and Physics specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	14	16	444
2	Applied Physics	14	16	444
3	Chemical Engineering	3	3	58
4	Chemistry	2	2	32
5	Medicine	1	1	13

Jianwei Ben

Publications

823

Citations

H-Index

Page 1

	Year	Citations
Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides Ke Jiang, Xiaojuan Sun, Zhiming Shi, Light Science & Applications	2021	91
Fabrication and Electrochemical Performance of PVA/CNT/PANI Flexible Films as Electrodes for Supercapacitors Jianwei Ben, Zhiyuan Song, Xinke Liu, Nanoscale Research Letters	2020	86
Review on the Progress of AlGaN-based Ultraviolet Light-Emitting Diodes Yuxuan Chen, Jianwei Ben, Fujun Xu, Fundamental Research	2021	59
Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing Jianwei Ben, Xiaojuan Sun, Yuping Jia, CrystEngComm Materials EngineeringMaterials ScienceElectrical EngineeringAluminium NitrideEngineering	2018	52
Polarization-enhanced AlGaN solar-blind ultraviolet detectors Ke Jiang, Xiaojuan Sun, Zi‐Hui Zhang, Photonics Research Aluminium NitrideWide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineering	2020	51
Origination and evolution of point defects in AlN film annealed at high temperature Cuihong Kai, Hang Zang, Jianwei Ben, Journal of Luminescence Materials ScienceMaterials EngineeringAln FilmMaterial AnalysisPoint Defects	2021	44
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing Jianwei Ben, Zhiming Shi, Hang Zang, Applied Physics Letters Aluminium NitrideHigh Temperature AnnealingEngineeringSevere Plastic DeformationPhysical Vapor	2020	36
Normally-off p-GaN Gated AlGaN/GaN HEMTs Using Plasma Oxidation Technique in Access Region Xinke Liu, Hsien‐Chin Chiu, Chia‐Hao Liu, IEEE Journal of the Electron Devices Society Wide-bandgap SemiconductorSemiconductor TechnologyElectrical EngineeringEngineeringHr-gan Layers	2020	35
The defect evolution in homoepitaxial AlN layers grown by high-temperature metal–organic chemical vapor deposition Ke Jiang, Xiaojuan Sun, Jianwei Ben, CrystEngComm Materials EngineeringMaterials ScienceHomoepitaxial AlnAln/sapphire TemplatesEngineering	2018	32
Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductors Zhiwei Xie, Ke Jiang, Shanli Zhang, Light Science & Applications	2024	29

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