Da-Cheng Lu

Wurtzite GaN epitaxial growth on a Si(001) substrate using γ-Al2O3 as an intermediate layer

Lianshan Wang, Xianglin Liu, Yude Zan et al. · Applied Physics Letters · 1998 · 83 citations

Materials Science, Semiconductors, Electrical Engineering +12

High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics

Konstantinos P. Giapis, Da-Cheng Lu, Klavs F. Jensen · Applied Physics Letters · 1989 · 48 citations

Engineering, Electron Mobility, Chemical Deposition +18

Influence of the growth temperature of the high-temperature AlN buffer on the properties of GaN grown on Si(111) substrate

Yuan Lü, Xianglin Liu, Xiaohui Wang et al. · Journal of Crystal Growth · 2003 · 43 citations

Materials Science, Materials Engineering, Electrical Engineering +10

A new method to fabricate InGaN quantum dots by metalorganic chemical vapor deposition

Zhen Chen, Da-Cheng Lu, Hairong Yuan et al. · Journal of Crystal Growth · 2002 · 35 citations

Materials Science, Engineering, Nanomaterials +10

The growth morphologies of GaN layer on Si(111) substrate

Yuan Lü, Xianglin Liu, Da-Cheng Lu et al. · Journal of Crystal Growth · 2002 · 26 citations · Full text

Applied Physics, Gan Layer, Gan Power Device