Liuhong Ma

The effects and mechanisms of 2 MeV proton irradiation on InP-based high electron mobility transistors

Jiajia Zhang, Peng Ding, Bo Mei et al. · Applied Physics Letters · 2022 · 31 citations

Engineering, Electrical Engineering, Electronic Materials +16

Low-temperature electron mobility in heavily n-doped junctionless nanowire transistor

Xiaoming Li, Weihua Han, Hao Wang et al. · Applied Physics Letters · 2013 · 29 citations

Engineering, Electrical Engineering, Materials Science +17

Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

Jian Yang, Chaowei Si, Guowei Han et al. · Micromachines · 2015 · 28 citations · Full text

Engineering, Manufacturing Engineering, Materials Science +17

Effect of defects properties on InP-based high electron mobility transistors*

Shuxiang Sun, Ming-Ming Chang, Mengke Li et al. · Chinese Physics B · 2019 · 24 citations

Engineering, Electrical Engineering, Materials Science +17

Numerical simulation of the impact of surface traps on the performance of InP‐based high electron mobility transistors

Shuxiang Sun, Liuhong Ma, Cheng Chao et al. · physica status solidi (a) · 2017 · 22 citations

Engineering, Electrical Engineering, Materials Science +17