Fei Yang - Concepedia

Author

Fei Yang

Chinese Academy of Sciences ORCID

Also Known As

F. Yang, Fei Yang, YANG Fei, Yang Fei, Yang, Fei

Publications

562

Citations

H-Index

Concepts

All Affiliations

Chinese Academy of Sciences Institute of Semiconductors State Grid Corporation of China (China)University of Electronic Science and Technology of China Institute of Mechanics

About

Fei Yang is an author at Chinese Academy of Sciences specializing in engineering, electrical engineering, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	12	13	435
2	Electrical Engineering	8	8	193
3	Applied Physics	7	7	299
4	Computer Engineering	2	2	24
5	Chemistry	1	1	56

Fei Yang

Publications

456

Citations

H-Index

Page 1

	Year	Citations
Structural, magnetic properties and photoemission study of Ni-doped ZnO Zhigang Yin, Nuofu Chen, Fei Yang, Solid State Communications Materials ScienceMagnetismMagnetic PropertiesEngineeringOxide Electronics	2005	134
Self-assembled ultrasmall mixed Co–W phosphide nanoparticles on pristine graphene with remarkable synergistic effects as highly efficient electrocatalysts for hydrogen evolution Xiaoyan Wang, Jia Bo Le, Fei Yang, Journal of Materials Chemistry A Materials ScienceHydrogen EvolutionGraphene NanomeshesGraphene Quantum DotEngineering	2022	56
As-doped p-type ZnO films by sputtering and thermal diffusion process Peng Wang, Nuofu Chen, Zhigang Yin, Journal of Applied Physics Materials ScienceMaterials EngineeringElectrical EngineeringIi-vi SemiconductorEngineering	2006	52
An Improved ICP Etching for Mesa-Terminated 4H-SiC p-i-n Diodes Chao Han, Yuming Zhang, Qingwen Song, IEEE Transactions on Electron Devices Electrical EngineeringEngineeringImproved Icp EtchingHigh Voltage EngineeringImproved Bosch	2015	37
Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering Peng Wang, Nuofu Chen, Zhigang Yin, Journal of Crystal Growth Materials EngineeringMagnetismMaterials ScienceEngineeringRadio Frequency	2006	30
4H-SiC superjunction trench MOSFET with reduced saturation current Qingyuan He, Xiaorong Luo, Tian Liao, Superlattices and Microstructures Electrical EngineeringEngineeringPower Semiconductor DevicePower ElectronicsReduced Saturation	2018	23
A novel 4H-SiC trench MOSFET with double shielding structures and ultralow gate-drain charge Xiaorong Luo, Tian Liao, Jie Wei, Journal of Semiconductors Semiconductor TechnologyElectrical EngineeringTrench MosfetEngineeringDouble-trench Mosfet	2019	21
Investigation of Mn-implanted n-Si by low-energy ion beam deposition Lifeng Liu, Nuofu Chen, Shulin Song, Journal of Crystal Growth Ion ImplantationElectrical EngineeringEngineeringMicrofabricationApplied Physics	2004	20
A Novel IGBT Structure With Floating N-Doped Buried Layer in P-Base to Suppress Latch-Up Fei Yang, Ji Tan, Guangyin Zhang, IEEE Electron Device Letters Electrical EngineeringParasitic ThyristorEngineeringCurrent DensityNanoelectronics	2016	14
Investigation of Mn-implanted n-type Ge Lifeng Liu, Nuofu Chen, Zhigang Yin, Journal of Crystal Growth Materials ScienceMn-implanted N-type GeElectrical EngineeringMaterials EngineeringEngineering	2004	13

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