Babak Mohammadi

A 500 fW/bit 14 fJ/bit-access 4kb standard-cell based sub-V_T memory in 65nm CMOS

Pascal Meinerzhagen, Oskar Andersson, Babak Mohammadi et al. · 2012 · 29 citations · Full text

Non-volatile Memory, Engineering, Vlsi Design +18

A 128 kb 7T SRAM Using a Single-Cycle Boosting Mechanism in 28-nm FD–SOI

Babak Mohammadi, Oskar Andersson, Joseph Nguyen et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 2017 · 24 citations

Low-power Electronics, Single-cycle Boosting Mechanism, Electrical Engineering +15

Ultra Low Voltage Synthesizable Memories: A Trade-Off Discussion in 65 nm CMOS

Oskar Andersson, Babak Mohammadi, Pascal Meinerzhagen et al. · IEEE Transactions on Circuits and Systems I Regular Papers · 2016 · 22 citations · Full text

Non-volatile Memory, Engineering, Vlsi Design +19

A 65 nm single stage 28 fJ/cycle 0.12 to 1.2V level-shifter

Babak Mohammadi, Joachim Rodrigues · 2014 · 15 citations

Low-power Electronics, Electrical Engineering, Engineering +10

Dual-V<inf>T</inf> 4kb sub-V<inf>T</inf> memories with <1 pW/bit leakage in 65 nm CMOS

Oskar Andersson, Babak Mohammadi, Pascal Meinerzhagen et al. · 2013 · 13 citations

Non-volatile Memory, Engineering, Vlsi Design +23