Yamini Sharma

n B n structure based on InAs∕GaSb type-II strained layer superlattices

Jean‐Baptiste Rodriguez, E. Plis, G. Bishop et al. · Applied Physics Letters · 2007 · 254 citations

Wide-bandgap Semiconductor, Superconducting Material, Engineering +22

Multi-stack InAs/InGaAs sub-monolayer quantum dots infrared photodetectors

J. O. Kim, Sourav Sengupta, Ajit V. Barve et al. · Applied Physics Letters · 2013 · 86 citations

Quantum Photonics, Optical Materials, Engineering +19

Low-strain InAs∕InGaAs∕GaAs quantum dots-in-a-well infrared photodetector

R. V. Shenoi, R. S. Attaluri, A. Siroya et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 2008 · 53 citations

Materials Science, Novel Dwell Design, Photoluminescence +10

Sub-monolayer quantum dots in confinement enhanced dots-in-a-well heterostructure

Sourav Sengupta, J. O. Kim, Ajit V. Barve et al. · Applied Physics Letters · 2012 · 53 citations

Optical Materials, Engineering, Colloidal Nanocrystals +18

Confinement enhancing barriers for high performance quantum dots-in-a-well infrared detectors

Ajit V. Barve, Sourav Sengupta, J. O. Kim et al. · Applied Physics Letters · 2011 · 32 citations

Categoryquantum Electronics, Engineering, Optoelectronic Devices +19