Y. He

Vertical cavity violet light emitting diode incorporating an aluminum gallium nitride distributed Bragg mirror and a tunnel junction

M. Diagne, Y. He, Hao Zhou et al. · Applied Physics Letters · 2001 · 99 citations

Wide-bandgap Semiconductor, Photonics, Electrical Engineering +15

Exciton-polariton dynamics in a transparent organic semiconductor microcavity

Jung‐Hoon Song, Y. He, A. V. Nurmikko et al. · Physical Review B · 2004 · 71 citations

Quantum Science, Photonics, Quantum Photonics +14

Catalytic growth of group III-nitride nanowires and nanostructures by metalorganic chemical vapor deposition

Jie Su, G. Cui, M. Gherasimova et al. · Applied Physics Letters · 2004 · 62 citations

Engineering, Chemistry, Group Iii-nitride Nanowires +17

Ultraviolet light-emitting diodes operating in the 340nm wavelength range and application to time-resolved fluorescence spectroscopy

Hongbo Peng, Eleni Makarona, Y. He et al. · Applied Physics Letters · 2004 · 43 citations

Engineering, Time-resolved Fluorescence Spectroscopy, Luminescence Property +19

Growth of AlGaN nanowires by metalorganic chemical vapor deposition

Jie Su, M. Gherasimova, G. Cui et al. · Applied Physics Letters · 2005 · 42 citations

Materials Science, Aluminium Nitride, Chemical Engineering +13