Chang-Hung Yu

Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface

Hung-Wen Huang, C. C. Kao, J.T. Chu et al. · IEEE Photonics Technology Letters · 2005 · 111 citations

Electrical Engineering, Nano-roughened P-gan Surface, Engineering +13

Fabrication of InGaN/GaN nanorod light-emitting diodes with self-assembled Ni metal islands

C. H. Chiu, Tien‐Chang Lu, Hung-Wen Huang et al. · Nanotechnology · 2007 · 110 citations

Engineering, Chemistry, Luminescence Property +21

Enhanced light output of an InGaN/GaN light emitting diode with a nano-roughened p-GaN surface

Hung-Wen Huang, Jiunn-Yi Chu, C. C. Kao et al. · Nanotechnology · 2005 · 87 citations

Electrical Engineering, Nano-roughened P-gan Surface, Engineering +14

Room-temperature electron spin relaxation in bulk InAs

Thomas F. Boggess, J. T. Olesberg, Chang-Hung Yu et al. · Applied Physics Letters · 2000 · 64 citations

Subpicosecond Pump–probe Measurements, Spintronics, Quantum Science +15

Low-resistance ohmic contacts on <i>p</i>-type GaN using Ni/Pd/Au metallization

Chen-Fu Chu, Chang-Hung Yu, Y. K. Wang et al. · Applied Physics Letters · 2000 · 61 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +9