Nanotechnology · 2005 · 87 citations · 13 references
EngineeringElectrical EngineeringMaterials EngineeringOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser Surface ProcessingLight SourcesLight-emitting DiodesOptoelectronic DevicesSemiconductor Device MaterialsSemiconductor SurfacesContact Area OptimizationEquivalent Series ResistanceEtchingGallium Nitride (Gan) MaterialsGallium Nitride Light-emitting DiodesGallium Nitride Power DevicesLaser Surface EtchingSeries Resistance
This investigation describes the development of an InGaN/GaN light emitting diode (LED) with a nano-roughened top p-GaN surface using an Ni nano-mask and laser etching. The light output of the InGaN/GaN LED with a nano-roughened top p-GaN surface is 1.55 times that of a conventional LED, and the wall-plug efficiency is 68% higher at 20 mA. The series resistance of the InGaN/GaN LED was reduced by 32% by the increase in the contact area of the nano-roughened surface.
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High-power AlGaInN flip-chip light-emitting diodes
Jonathan J. Wierer, D. A. Steigerwald, Michael R. Krames et al. · Applied Physics Letters · 2001 · 413 citations