Guangze Zhang

GeSn p-i-n photodetector for all telecommunication bands detection

Shaojian Su, Buwen Cheng, Chunlai Xue et al. · Optics Express · 2011 · 236 citations · Full text

Engineering, Silicon On Insulator, Image Sensor +16

Mechanical property and thermal degradation mechanism of granite in thermal-mechanical coupled triaxial compression

Hongyuan Zhou, Zaobao Liu, Wanqing Shen et al. · International Journal of Rock Mechanics and Mining Sciences · 2022 · 102 citations

Materials Science, Rock Testing, Engineering +5

Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400 <formula formulatype="inline"><tex Notation="TeX">$^{\circ}\hbox{C}\ \hbox{Si}_{2}\hbox{H}_{6}$</tex> </formula> Passivation

Xiao Gong, Genquan Han, Fan Bai et al. · IEEE Electron Device Letters · 2013 · 100 citations

Sub Xmlns, Engineering, Carrier Mobility +17

Epitaxial growth and thermal stability of Ge1−xSnx alloys on Ge-buffered Si(001) substrates

Shaojian Su, Wei Wang, Buwen Cheng et al. · Journal of Crystal Growth · 2011 · 89 citations

Materials Science, Materials Engineering, Engineering +6

Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

Yue Yang, Shaojian Su, Pengfei Guo et al. · 2012 · 59 citations

Electrical Engineering, Gesn Channel, Engineering +13