Naomi Yoshida

Nitride passivation of the interface between high-k dielectrics and SiGe

Kasra Sardashti, Kai-Ting Hu, Kechao Tang et al. · Applied Physics Letters · 2016 · 49 citations

Engineering, Materials Engineering, Materials Science +17

Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1− x(001) and SixGe1− x(110)

Mary Edmonds, Kasra Sardashti, Steven Wolf et al. · The Journal of Chemical Physics · 2017 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Chemical studies of CVD Cu deposited on Ta and TaN barriers under various process conditions

Steve Voss, Srinivas Gandikota, Liang-Yuh Chen et al. · Microelectronic Engineering · 2000 · 18 citations

Natural Sciences, Materials Engineering, Materials Science +12

High-k/metal gate stacks in gate first and replacement gate schemes

Sree Kesapragada, Rongjun Wang, Dave Liu et al. · 2010 · 17 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Effective Work Function Engineering for Aggressively Scaled Planar and Multi-Gate Fin Field-Effect Transistor-Based Devices with High-k Last Replacement Metal Gate Technology

A. Veloso, Soon Aik Chew, Yuichi Higuchi et al. · Japanese Journal of Applied Physics · 2013 · 16 citations

Engineering, Electrical Engineering, Materials Science +17