Chen-Hsi Lin

Suppression of endurance degradation by utilizing oxygen plasma treatment in HfO2 resistive switching memory

Umesh Chand, Chun-Yang Huang, Jheng-Hong Jieng et al. · Applied Physics Letters · 2015 · 79 citations

Materials Engineering, Non-volatile Memory, Electrical Engineering +13

A study on low-power, nanosecond operation and multilevel bipolar resistance switching in Ti/ZrO₂/Pt nonvolatile memory with 1T1R architecture

Ming-Chi Wu, Wen-Yueh Jang, Chen-Hsi Lin et al. · Semiconductor Science and Technology · 2012 · 78 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +20

High-speed and localized resistive switching characteristics of double-layer SrZrO₃ memory devices

Meng-Han Lin, Ming-Chi Wu, Chun-Yang Huang et al. · Journal of Physics D Applied Physics · 2010 · 55 citations

Materials Science, Oxygen Flow Control, Electrical Engineering +14

Investigation of thermal stability and reliability of HfO2 based resistive random access memory devices with cross-bar structure

Umesh Chand, Kuan-Chang Huang, Chun-Yang Huang et al. · Journal of Applied Physics · 2015 · 47 citations

Hardware Security, Materials Science, Electrical Engineering +15

Resistive switching characteristics and mechanisms of Pt-embedded SrZrO3 memory devices

Meng-Han Lin, Ming-Chi Wu, Chen-Hsi Lin et al. · Journal of Applied Physics · 2010 · 37 citations

Materials Science, Semiconductors, Electrical Engineering +15