HePeng Zhang

1039 kA/cm2 peak tunneling current density in GaN-based resonant tunneling diode with a peak-to-valley current ratio of 1.23 at room temperature on sapphire substrate

HePeng Zhang, JunShuai Xue, ZhiPeng Sun et al. · Applied Physics Letters · 2021 · 16 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Engineering +17

Study on the effects of growth rate on GaN films properties grown by plasma-assisted molecular beam epitaxy

HePeng Zhang, JunShuai Xue, YongRui Fu et al. · Journal of Crystal Growth · 2020 · 14 citations

Materials Science, Electrical Engineering, Epitaxial Growth +9

Demonstration of highly repeatable room temperature negative differential resistance in large area AlN/GaN double-barrier resonant tunneling diodes

HePeng Zhang, JunShuai Xue, YongRui Fu et al. · Journal of Applied Physics · 2021 · 13 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +11

Impact of Surface Treatments and Post-Deposition Annealing Upon Interfacial Property of ALD-Al₂O₃ on a-Plane GaN

Yanni Zhang, Jincheng Zhang, Zhuangzhuang Hu et al. · IEEE Journal of the Electron Devices Society · 2020 · 10 citations · Full text

Materials Science, Surface Technology, Electrical Engineering +14