Sangkwon Lee

A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization

Myeong-Jae Park, Ho Sung Cho, Tae-Sik Yun et al. · 2022 IEEE International Solid- State Circuits Conference (ISSCC) · 2022 · 36 citations

Engineering, Computer Architecture, Multi-channel Memory Architecture +16

22.3 A 128Gb 8-High 512GB/s HBM2E DRAM with a Pseudo Quarter Bank Structure, Power Dispersion and an Instruction-Based At-Speed PMBIST

Dong Uk Lee, Ho Sung Cho, Jihwan Kim et al. · 2020 · 31 citations

Electrical Engineering, Hbm2e Dram, Engineering +15

A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques

Keunsoo Song, Sangkwon Lee, Dongkyun Kim et al. · IEEE Journal of Solid-State Circuits · 2015 · 21 citations

Low-power Electronics, Mobile Dram, Electrical Engineering +12

A 24-Gb/s/Pin 8-Gb GDDR6 With a Half-Rate Daisy-Chain-Based Clocking Architecture and I/O Circuitry for Low-Noise Operation

Ji-Hyo Kang, Jaehyeok Yang, Kyunghoon Kim et al. · IEEE Journal of Solid-State Circuits · 2021 · 18 citations

Artificial Intelligence, Engineering, Vlsi Design +16

25.1 A 24Gb/s/pin 8Gb GDDR6 with a Half-Rate Daisy-Chain-Based Clocking Architecture and IO Circuitry for Low-Noise Operation

Kyunghoon Kim, Joo‐Hyung Chae, Jaehyeok Yang et al. · 2021 · 16 citations

Artificial Intelligence, Engineering, Vlsi Design +16