Yan Guan

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

Dayu Zhou, Jin Xu, Qing Li et al. · Applied Physics Letters · 2013 · 382 citations

Materials Science, Hafnium Oxide, Electronic Devices +12

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

Dayu Zhou, Yan Guan, Melvin M. Vopson et al. · Acta Materialia · 2015 · 126 citations · Full text

Polarization Reversal, Electrical Engineering, Ferroelastics +11

Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction

Xiaohua Liu, Dayu Zhou, Yan Guan et al. · Acta Materialia · 2018 · 57 citations

Materials Science, Materials Engineering, Engineering +11

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

M. Hayden Breckenridge, James Tweedie, Pramod Reddy et al. · Applied Physics Letters · 2021 · 57 citations · Full text

Materials Engineering, Materials Science, Electrical Engineering +14

Shallow Si donor in ion-implanted homoepitaxial AlN

M. Hayden Breckenridge, Qiang Guo, Andrew Klump et al. · Applied Physics Letters · 2020 · 34 citations

Materials Science, Semiconductors, Aluminium Nitride +11