Yan Guan

Wake-up effects in Si-doped hafnium oxide ferroelectric thin films

Dayu Zhou, Jin Xu, Qing Li et al. · Applied Physics Letters · 2013 · 398 citations

Natural Sciences, Materials Engineering, Materials Science +16

Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films

Dayu Zhou, Yan Guan, Melvin M. Vopson et al. · Acta Materialia · 2015 · 127 citations · Full text

Natural Sciences, Materials Science, Physics +17

Endurance properties of silicon-doped hafnium oxide ferroelectric and antiferroelectric-like thin films: A comparative study and prediction

Xiaohua Liu, Dayu Zhou, Yan Guan et al. · Acta Materialia · 2018 · 60 citations

Natural Sciences, Materials Engineering, Materials Science +17

High Mg activation in implanted GaN by high temperature and ultrahigh pressure annealing

M. Hayden Breckenridge, James Tweedie, Pramod Reddy et al. · Applied Physics Letters · 2021 · 59 citations · Full text

Engineering, Materials Engineering, Materials Science +17

Shallow Si donor in ion-implanted homoepitaxial AlN

M. Hayden Breckenridge, Qiang Guo, Andrew Klump et al. · Applied Physics Letters · 2020 · 35 citations

Engineering, Materials Engineering, Materials Science +17