This letter presents a highly sensitive near-infrared (IR)

$a$

-Si:H phototransistor for touch sensor applications. The narrow bandgap of

$a$

-Si exhibits a wideband spectrum response from IR to ultraviolet region, where the IR bandpass filter layers allow the

$a$

-Si:H phototransistor to respond to the selective IR light uninterrupted by visible light. The time-resolved photoresponse and transfer

$I$

–

$V$

characteristics for the near-IR

$a$

-Si:H phototransistor as a function of power at 785-nm illumination allow the observation of fast photoresponse (

$\tau \sim 0.1$

ps), high external quantum efficiency (7.52), and high photoresponse. A prototype unit pixel structure for touch sensors composed of amorphous Si-based switching/amplification/near-IR phototransistors and a storage capacitor, is proposed and designed. The overall results suggest that the near-IR

$a$

-Si:H phototransistor offers unique possibilities for user-friendly, low-cost, and large-area touch sensors, especially aimed at consumer applications and other areas of optoelectronics.

#	Concept	H-Index	Publications	Citations
1	Engineering	2	2	33
2	Applied Physics	2	2	33
3	Electrical Engineering	2	2	33
4	Physics	2	2	33
5	Natural Sciences	1	1	20

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