Pradip Dalapati

Investigation of AlGaN/GaN high electron mobility transistors on Silicon (111) substrates employing multi-stacked strained layer superlattice structures

Pradip Dalapati, Shunsuke Urata, Takashi Egawa · Superlattices and Microstructures · 2020 · 28 citations

Layer Superlattice Structures, Wide-bandgap Semiconductor, Electrical Engineering +4

Current-induced degradation process in (In)AlGaN-based deep-UV light-emitting diode fabricated on AlN/sapphire template

Pradip Dalapati, Kosuke Yamamoto, Takashi Egawa et al. · Optical Materials · 2020 · 25 citations

Aluminium Nitride, Electrical Engineering, Solid-state Lighting +8

Effect of temperature on the intensity and carrier lifetime of an AlGaAs based red light emitting diode

Pradip Dalapati, Nabin Baran Manik, A. N. Basu · Journal of Semiconductors · 2013 · 22 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Electrical Engineering +13

Influence of temperature on the performance of high power AlGaInP based red light emitting diode

Pradip Dalapati, Nabin Baran Manik, A. N. Basu · Optical and Quantum Electronics · 2014 · 20 citations

White Oled, Electrical Engineering, Solid-state Lighting +7

Bias-controlled photocurrent generation process in GaN-based ultraviolet p–i–n photodetectors fabricated with a thick Al2O3 passivation layer

Pradip Dalapati, Kosuke Yamamoto, Toshiharu Kubo et al. · Optik · 2021 · 19 citations

Wide-bandgap Semiconductor, Electrical Engineering, Engineering +7