J. F. Chen

Carrier distribution and relaxation-induced defects of InAs/GaAs quantum dots

J. S. Wang, J. F. Chen, Jian Huang et al. · Applied Physics Letters · 2000 · 57 citations

Natural Sciences, Materials Science, Physics +17

Low frequency negative capacitance behavior of molecular beam epitaxial GaAs n-low temperature-i-p structure with low temperature layer grown at a low temperature

N. C. Chen, P. Y. Wang, J. F. Chen · Applied Physics Letters · 1998 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Characterization of self-assembled InAs quantum dots with InAlAs∕InGaAs strain-reduced layers by photoluminescence spectroscopy

Kuang-Po Chang, Shyuan Yang, Der-San Chuu et al. · Journal of Applied Physics · 2005 · 21 citations

Natural Sciences, Materials Engineering, Materials Science +16

Strain relaxation in InAs∕InGaAs quantum dots investigated by photoluminescence and capacitance-voltage profiling

J. F. Chen, Ru-Shang Hsiao, Y. P. Chen et al. · Applied Physics Letters · 2005 · 20 citations

Engineering, Materials Engineering, Materials Science +17

Role of 0.66 eV dominant trap in annealed low-temperature grown molecular beam epitaxial GaAs

N. C. Chen, P. Y. Wang, J. F. Chen · Journal of Applied Physics · 1998 · 18 citations

Engineering, Electrical Engineering, Materials Science +17