B. J. Isherwood

Growth of epitaxial layers of gallium nitride on silicon carbide and corundum substrates

D. K. Wickenden, K. R. Faulkner, R W Brander et al. · Journal of Crystal Growth · 1971 · 85 citations

Materials Engineering, Materials Science, Engineering +8

X-ray multiple diffraction as a tool for studying heteroepitaxial layers

B. J. Isherwood, Blain Brown, M. A. G. Halliwell · Journal of Crystal Growth · 1981 · 31 citations

X-ray Crystallography, Materials Science, Engineering +6

The application of synchrotron radiation to X-ray multiple-diffraction studies

Blain Brown, G. F. Clark, C. Dineen et al. · Journal of Applied Crystallography · 1989 · 29 citations

Engineering, Synchrotron Radiation Research, Physics +14

Population distribution subsequent to charge exchange of 29.85 keV Ni+ on sodium vapor

C.A. Ryder, K. Minamisono, H.B. Asberry et al. · Spectrochimica Acta Part B Atomic Spectroscopy · 2015 · 24 citations

Chemical Engineering, Population Distribution Subsequent, Engineering +6

Preparation of single phase gallium nitride from single crystal gallium arsenide

B. J. Isherwood, D. K. Wickenden · Journal of Materials Science · 1970 · 22 citations

Materials Science, Inorganic Chemistry, Engineering +4