Statistics
Publications
7
Citations
144
H-Index
7
Active since
1991
A. Dip is an author at North Carolina State University specializing in semiconductor devices, materials science, and semiconductor materials.
Publications per year
1991–2009
7
7
Relaxation of strained Si layers grown on SiGe buffers
Srikanth Samavedam, William J. Taylor, J. M. Grant et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1999 · 71 citations
Natural Sciences, Materials Engineering, Materials Science +17
Atomic layer epitaxy of AlxGa1−xAs and device quality GaAs
Jiawei Gong, P. C. Colter, D. Jung et al. · Journal of Crystal Growth · 1991 · 13 citations
Atomic layer epitaxy of device quality GaAs with a 0.6 μm/h growth rate
P. C. Colter, S. A. Hussien, A. Dip et al. · Applied Physics Letters · 1991 · 12 citations
Atomic layer epitaxy for resonant tunneling devices
Alan Seabaugh, James H. Luscombe, John N. Randall et al. · Thin Solid Films · 1993 · 11 citations
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