Jeong Yong Yang

Reconfigurable Physical Reservoir in GaN/α-In₂Se₃ HEMTs Enabled by Out-of-Plane Local Polarization of Ferroelectric 2D Layer

Jeong Yong Yang, Minseong Park, Min Jae Yeom et al. · ACS Nano · 2023 · 50 citations

Fluorine-based plasma treatment for hetero-epitaxial β-Ga2O3 MOSFETs

Yeong Je Jeong, Jeong Yong Yang, Chan Ho Lee et al. · Applied Surface Science · 2021 · 44 citations

Materials Engineering, Electrical Engineering, Fluorine-based Plasma Treatment +4

Active-matrix monolithic gas sensor array based on MoS2 thin-film transistors

Sehwan Kim, Heekyeong Park, Sooho Choo et al. · Communications Materials · 2020 · 42 citations · Full text

Abstract Highly, Engineering, Gas Sensor +17

Pulsed E-/D-Mode Switchable GaN HEMTs With a Ferroelectric AlScN Gate Dielectric

Jeong Yong Yang, S. Y. Oh, Min Jae Yeom et al. · IEEE Electron Device Letters · 2023 · 37 citations

Semiconductors, Pulse Modulation, Electrical Engineering +8

Heteroepitaxial α-Ga₂O₃ MOSFETs with a 2.3 kV breakdown voltage grown by halide vapor-phase epitaxy

Yeong Je Jeong, Ji‐Hyeon Park, Min Jae Yeom et al. · Applied Physics Express · 2022 · 29 citations

Oxide Heterostructures, Materials Science, Electrical Engineering +12