R. M. Huang

On the mechanism for interface trap generation in MOS transistors due to channel hot carrier stressing

Zhi Chen, K. Hess, Jinju Lee et al. · IEEE Electron Device Letters · 2000 · 93 citations

Hot Carrier, Electrical Engineering, Engineering +13

Risk Reliability Assessment of Transmission Lines under Multiple Natural Disasters in Modern Power Systems

Rongquan Fan, Wenhui Zeng, Ziqiang Ming et al. · Energies · 2023 · 19 citations · Full text

Engineering, Natural Disasters, Risk Analysis +26

The understanding of multi-level RTN in trigate MOSFETs through the 2D profiling of traps and its impact on SRAM performance: A new failure mechanism found

E. R. Hsieh, Yi-He Tsai, Steve S. Chung et al. · 2012 · 17 citations

Electrical Engineering, Trigate Mosfets, Vlsi Design +13

A single device based voltage step stress (VSS) technique for fast reliability screening

Zhigang Ji, J. F. Zhang, Weidong Zhang et al. · 2014 · 13 citations

Engineering, Industrial Engineering, Single Device +19

The understanding of the trap induced variation in bulk tri-gate devices by a novel random trap profiling (RTP) technique

Hsiu‐Min Tsai, E. R. Hsieh, Steve S. Chung et al. · 2012 · 13 citations

Bulk Tri-gate Devices, Defect Tolerance, Electrical Engineering +14