E. Durğun Özben

Amorphous ternary rare-earth gate oxides for future integration in MOSFETs

J. M. J. Lopes, E. Durğun Özben, M. Roeckerath et al. · Microelectronic Engineering · 2009 · 57 citations

Engineering, Electrical Engineering, Materials Science +14

Integration of $\hbox{LaLuO}_{3} \ (\kappa \sim \hbox{30})$ as High-$\kappa$ Dielectric on Strained and Unstrained SOI MOSFETs With a Replacement Gate Process

E. Durğun Özben, S. Mantl, J. M. J. Lopes et al. · IEEE Electron Device Letters · 2010 · 34 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Gadolinium scandate as an alternative gate dielectric in field effect transistors on conventional and strained silicon

M. Roeckerath, J. M. J. Lopes, E. Durğun Özben et al. · Applied Physics A · 2008 · 26 citations

Engineering, Electrical Engineering, Materials Science +14

SmScO 3 thin films as an alternative gate dielectric

E. Durğun Özben, J. M. J. Lopes, M. Roeckerath et al. · Applied Physics Letters · 2008 · 24 citations · Full text

Natural Sciences, Electrical Engineering, Materials Science +17

Electrical and Structural Properties of Ternary Rare-Earth Oxides on Si and Higher Mobility Substrates and their Integration as High-k Gate Dielectrics in MOSFET Devices

J. M. J. Lopes, E. Durğun Özben, Michael E. Schnee et al. · ECS Transactions · 2011 · 14 citations

Natural Sciences, Materials Engineering, Materials Science +17