Kazuhisa Torigoe

Surface band-bending and Fermi-level pinning in doped Si observed by Kelvin force microscopy

Makoto Arita, Kazuhisa Torigoe, Takashi Yamauchi et al. · Applied Physics Letters · 2014 · 23 citations

Natural Sciences, Materials Science, Physics +17

Sensitivity analysis of scanning microwave microscopy for nano-scale dopant measurements in Si

Kazuhisa Torigoe, Makoto Arita, Teruaki Motooka · Journal of Applied Physics · 2012 · 14 citations

Engineering, Electrical Engineering, Materials Science +17

Oxygen concentration dependence of as-grown defect formation in nitrogen-doped Czochralski silicon single crystals

Kaoru Kajiwara, Kazuhisa Torigoe, Kazuhiro Harada et al. · Journal of Crystal Growth · 2021 · 14 citations

Engineering, Materials Engineering, Materials Science +16

Oxygen Precipitation Properties of Nitrogen‐Doped Czochralski Silicon Single Crystals with Low Oxygen Concentration

Kaoru Kajiwara, Kazuhiro Harada, Kazuhisa Torigoe et al. · physica status solidi (a) · 2019 · 12 citations

Natural Sciences, Materials Engineering, Materials Science +17

Formation of thermal donor enhanced by oxygen precipitation in silicon crystal

Kazuhisa Torigoe, Toshiaki Ono · AIP Advances · 2020 · 11 citations · Full text

Engineering, Materials Engineering, Materials Science +17