Yu. G. Shreter

Effect of the joule heating on the quantum efficiency and choice of thermal conditions for high-power blue InGaN/GaN LEDs

A. A. Efremov, N. I. Bochkareva, R. I. Gorbunov et al. · Semiconductors · 2006 · 231 citations

Stacking Faults as Quantum Wells for Excitons in Wurtzite GaN

Yu. T. Rebane, Yu. G. Shreter, M. Albrecht · physica status solidi (a) · 1997 · 108 citations

Semiconductors, Wide-bandgap Semiconductor, Electrical Engineering +15

Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes

N. I. Bochkareva, V. V. VORONENKOV, R. I. Gorbunov et al. · Applied Physics Letters · 2010 · 89 citations

Semiconductors, Quantum Science, Electrical Engineering +15

Cathodoluminescence and Transmission Electron Microscopy Study of the Influence of Crystal Defects on Optical Transitions in GaN

G. Salviati, M. Albrecht, C. Zanotti-Fregonara et al. · physica status solidi (a) · 1999 · 87 citations

Wide-bandgap Semiconductor, Optical Materials, Engineering +17

Strain and microstructure variation in grains of CVD diamond film

NC Burton, J. W. Steeds, G. Meaden et al. · Diamond and Related Materials · 1995 · 49 citations

Materials Science, Diamond-like Carbon, Engineering +8