V. S. Golovin

The Effect of the Carrier Drift Velocity Saturation in High-Power Semiconductor Lasers at Ultrahigh Drive Currents

O. S. Soboleva, V. S. Golovin, S. O. Slipchenko et al. · IEEE Transactions on Electron Devices · 2020 · 23 citations

Semiconductor Technology, Photonics, Electrical Engineering +14

Near-Field Dynamics of Ultra-Wide-Aperture (800 <i>μ</i>m) Diode Lasers Under Nanosecond Pulse Excitation

S. O. Slipchenko, A. A. Podoskin, V. S. Golovin et al. · IEEE Photonics Technology Letters · 2020 · 22 citations

Engineering, Laser Science, Laser-plasma Interaction +21

Ultrabroad tuning range (100  nm) of external-cavity continuous-wave high-power semiconductor lasers based on a single InGaAs quantum well

A. A. Podoskin, V. S. Golovin, P. S. Gavrina et al. · Applied Optics · 2019 · 18 citations

Optical Materials, Engineering, Laser Science +22

High peak optical power of 1ns pulse duration from laser diodes – low voltage thyristor vertical stack

S. O. Slipchenko, A. A. Podoskin, V. S. Golovin et al. · Optics Express · 2019 · 16 citations · Full text

Optical Materials, Engineering, Laser Science +21

Continuous wave and pulse (2–100 ns) high power AlGaAs/GaAs laser diodes (1050 nm) based on high and low reflective 13th order DBR

V. V. Zolotarev, A. Yu. Leshko, V. V. Shamakhov et al. · Semiconductor Science and Technology · 2019 · 15 citations