Juno Yu-Ting Huang

Design and characterization of strained InGaAs/GaAsSb type-II ‘W’ quantum wells on InP substrates for mid-IR emission

Juno Yu-Ting Huang, L. J. Mawst, T. F. Kuech et al. · Journal of Physics D Applied Physics · 2008 · 41 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +16

MOCVD-Grown Dilute Nitride Type II Quantum Wells

L. J. Mawst, Juno Yu-Ting Huang, Jeng-Ya Yeh et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2008 · 20 citations

Semiconductors, Materials Science, Semiconductor Technology +11

Deep-Etched Native-Oxide-Confined High-Index-Contrast AlGaAs Heterostructure Lasers With 1.3 $\mu$m Dilute-Nitride Quantum Wells

Di Liang, Jusong Wang, Juno Yu-Ting Huang et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2007 · 16 citations

Materials Science, Photonics, Semiconductors +14

GaAsSbN–GaAsSb–InP Type-II “W” Quantum Wells for Mid-IR Emission

Juno Yu-Ting Huang, L. J. Mawst, T. F. Kuech et al. · IEEE Journal of Selected Topics in Quantum Electronics · 2007 · 12 citations

Semiconductors, Bulk Gaassbn, Electrical Engineering +11

MOVPE growth of antimonide-containing alloy materials for long wavelength applications

T. F. Kuech, A. A. Khandekar, M. K. Rathi et al. · Journal of Crystal Growth · 2008 · 10 citations

Materials Engineering, Materials Science, Ii-vi Semiconductor +8