Mohana K. Rajpalke - Concepedia

Author

Mohana K. Rajpalke

Also Known As

Eduardo Puchol Morejon, M K Rajpalke, M. K. Rajpalke, M.K. Rajpalke, Mohana K Rajpalke, Mohana K. Rajpalke, Mohana Krishnappa Rajpalke, Mohana Rajpalke, Petit, Luca, Rajpalke, Mohana

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

Indian Institute of Science Bangalore Bharat Electronics (India)Government of India University of Liverpool University of Warwick

About

Mohana K. Rajpalke is an author at Indian Institute of Science Bangalore specializing in engineering, applied physics, and physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	17	37	1.1K
2	Applied Physics	17	37	1.1K
3	Electrical Engineering	14	19	531
4	Natural Sciences	4	4	113
5	Chemistry	3	3	101

Mohana K. Rajpalke

Publications

1.4K

Citations

H-Index

Page 1

	Year	Citations
InAs-Al hybrid devices passing the topological gap protocol Morteza Aghaee, Arun Akkala, Zulfi Alam, Physical review. B./Physical review. B EngineeringTopological MaterialsTopological Gap ProtocolTopological Quantum StateElectromagnetic Compatibility	2023	185
Growth and properties of GaSbBi alloys Mohana K. Rajpalke, W. M. Linhart, Max Birkett, Applied Physics Letters EngineeringCrystal Growth TechnologyIi-vi SemiconductorMolecular-beam EpitaxyQuantum Materials	2013	88
High Bi content GaSbBi alloys Mohana K. Rajpalke, W. M. Linhart, Max Birkett, Journal of Applied Physics Materials EngineeringMaterials ScienceOptical MaterialsEngineeringCrystalline Defects	2014	76
Binary group III-nitride based heterostructures: band offsets and transport properties Basanta Roul, Mahesh Kumar, Mohana K. Rajpalke, Journal of Physics D Applied Physics	2015	75
Surfactant effect of antimony addition to the morphology of self-catalyzed InAs1−x Sb x nanowires Ezekiel A. Anyebe, Mohana K. Rajpalke, T. D. Veal, Nano Research	2014	64
Bi-induced band gap reduction in epitaxial InSbBi alloys Mohana K. Rajpalke, W. M. Linhart, K. M. Yu, Applied Physics Letters Materials ScienceEngineeringCrystalline DefectsCrystal Growth TechnologyX-ray Diffraction	2014	63
Sb-Induced Phase Control of InAsSb Nanowires Grown by Molecular Beam Epitaxy Qiandong Zhuang, Ezekiel A. Anyebe, Renqi Chen, Nano Letters Crystal StructureOptical MaterialsEngineeringChemistrySemiconductor Nanostructures	2015	63
Theoretical and experimental studies of electronic band structure for GaSb<sub>1−<i>x</i></sub>Bi<sub><i>x</i></sub>in the dilute Bi regime Maciej P. Polak, P. Scharoch, R. Kudrawiec, Journal of Physics D Applied Physics	2014	54
Temperature dependence of the band gap of GaSb1−xBix alloys with 0 &lt; x ≤ 0.042 determined by photoreflectance Jan Kopaczek, R. Kudrawiec, W. M. Linhart, Applied Physics Letters EngineeringTemperature DependenceGasb1−xbix LayersBand GapIi-vi Semiconductor	2013	51
Experimental evidence of Ga-vacancy induced room temperature ferromagnetic behavior in GaN films Basanta Roul, Mohana K. Rajpalke, Thirumaleshwara N. Bhat, Applied Physics Letters Materials ScienceMagnetismElectrical EngineeringWide-bandgap SemiconductorEngineering	2011	48

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