W. M. Linhart - Concepedia

Author

W. M. Linhart

University of Liverpool ORCID

Also Known As

W M Linhart, W. Linhart, W. M. Linhart, W.M. Linhart, Wojciech Linhart, Wojciech M. Linhart, Wojcioech M. Linhart

Publications

1.6K

Citations

H-Index

Concepts

All Affiliations

University of Liverpool Wrocław University of Science and Technology University of Warwick AGH University of Krakow Lawrence Berkeley National Laboratory

About

W. M. Linhart is an author at University of Liverpool specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	20	23	1.3K
2	Applied Physics	20	22	1.3K
3	Natural Sciences	5	5	173
4	Chemistry	5	5	574
5	Electrical Engineering	3	3	81

W. M. Linhart

Publications

1.5K

Citations

H-Index

Page 1

	Year	Citations
Electronic and optical properties of single crystal SnS<sub>2</sub>: an earth-abundant disulfide photocatalyst Lee A. Burton, Thomas J. Whittles, David Hesp, Journal of Materials Chemistry A Materials ScienceTransition Metal ChalcogenidesGround StateOptical MaterialsEngineering	2015	319
Growth, disorder, and physical properties of ZnSnN2 Nathaniel Feldberg, J.D. Aldous, W. M. Linhart, Applied Physics Letters EngineeringCrystal Growth TechnologySolid-state ChemistryChemistryPhotovoltaics	2013	121
Band Gap Dependence on Cation Disorder in ZnSnN<sub>2</sub> Solar Absorber T. D. Veal, Nathaniel Feldberg, Nicholas F. Quackenbush, Advanced Energy Materials	2015	113
Band gap temperature-dependence of close-space sublimation grown Sb2Se3 by photo-reflectance Max Birkett, W. M. Linhart, Jessica Stoner, APL Materials Optical MaterialsEngineeringDirect Band GapSolid-state ChemistryClose-space Sublimation	2018	92
Growth and properties of GaSbBi alloys Mohana K. Rajpalke, W. M. Linhart, Max Birkett, Applied Physics Letters EngineeringCrystal Growth TechnologyIi-vi SemiconductorMolecular-beam EpitaxyQuantum Materials	2013	88
High Bi content GaSbBi alloys Mohana K. Rajpalke, W. M. Linhart, Max Birkett, Journal of Applied Physics Materials EngineeringMaterials ScienceOptical MaterialsEngineeringCrystalline Defects	2014	76
Direct Measurements of Fermi Level Pinning at the Surface of Intrinsically n-Type InGaAs Nanowires Maximilian Speckbacher, Julian Treu, Thomas J. Whittles, Nano Letters EngineeringOptoelectronic DevicesFermi Level PinningSemiconductorsSemiconductor Nanostructures	2016	70
Bi-induced band gap reduction in epitaxial InSbBi alloys Mohana K. Rajpalke, W. M. Linhart, K. M. Yu, Applied Physics Letters Materials ScienceEngineeringCrystalline DefectsCrystal Growth TechnologyX-ray Diffraction	2014	63
Ge interface engineering using ultra-thin La2O3 and Y2O3 films: A study into the effect of deposition temperature Ivona Z. Mitrović, M. Althobaiti, Ayendra Weerakkody, Journal of Applied Physics EngineeringY2o3/ge Gate StackMolecular Beam EpitaxyEpitaxial GrowthThin Film Processing	2014	57
Theoretical and experimental studies of electronic band structure for GaSb<sub>1−<i>x</i></sub>Bi<sub><i>x</i></sub>in the dilute Bi regime Maciej P. Polak, P. Scharoch, R. Kudrawiec, Journal of Physics D Applied Physics	2014	54

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