Mitsuaki Kaneko - Concepedia

Author

Mitsuaki Kaneko

Kyoto University ORCID

Also Known As

Kaneko, Mitsuaki, M Kaneko, M. Kaneko, Mai KANEKO, Mitsuaki Kaneko

Publications

908

Citations

H-Index

Concepts

All Affiliations

Kyoto University The University of Osaka

About

Mitsuaki Kaneko is an author at Kyoto University specializing in applied physics, engineering, and electrical engineering.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	11	11	307
2	Applied Physics	11	11	307
3	Electrical Engineering	9	9	247
4	Medicine	1	1	352
5	Cell Biology	1	1	352

Mitsuaki Kaneko

Publications

747

Citations

H-Index

Page 1

	Year	Citations
[Establishment of a new human endometrial adenocarcinoma cell line, Ishikawa cells, containing estrogen and progesterone receptors]. Masashi Nishida, Kyoko Kasahara, Mitsuaki Kaneko, PubMed Endometrial AdenocarcinomaProgesterone ReceptorsMalignant DiseaseHormonal ReceptorUterine Receptivity	1985	352
Mobility improvement of 4H-SiC (0001) MOSFETs by a three-step process of H<sub>2</sub> etching, SiO<sub>2</sub> deposition, and interface nitridation Keita Tachiki, Mitsuaki Kaneko, Tsunenobu Kimoto Applied Physics Express Semiconductor TechnologyMobility ImprovementElectrical EngineeringInterface NitridationEngineering	2021	68
Formation of high-quality SiC(0001)/SiO<sub>2</sub> structures by excluding oxidation process with H<sub>2</sub> etching before SiO<sub>2</sub> deposition and high-temperature N<sub>2</sub> annealing Keita Tachiki, Mitsuaki Kaneko, Takuma Kobayashi, Applied Physics Express Materials EngineeringMaterials ScienceOxidation ProcessSio 2Engineering	2020	46
High-Temperature Operation of n- and p-Channel JFETs Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate Mitsuaki Kaneko, Tsunenobu Kimoto IEEE Electron Device Letters EngineeringSilicon CarbideIntegrated CircuitsSemiconductor DeviceIon Implantation	2018	37
Normally-off 400 °C Operation of n- and p-JFETs With a Side-Gate Structure Fabricated by Ion Implantation Into a High-Purity Semi-Insulating SiC Substrate Masashi Nakajima, Mitsuaki Kaneko, Tsunenobu Kimoto IEEE Electron Device Letters Materials ScienceSemiconductor TechnologyElectrical EngineeringElectronic DevicesNormally-off 400	2019	32
Experimental Determination of Impact Ionization Coefficients Along 〈1120〉 in 4H-SiC Dionysios Stefanakis, Xilun Chi, Takuya Maeda, IEEE Transactions on Electron Devices Electrical EngineeringIon ImplantationEngineeringExperimental DeterminationImpact Ionization Coefficients	2020	27
SiC Complementary Junction Field-Effect Transistor Logic Gate Operation at 623 K Mitsuaki Kaneko, Masashi Nakajima, Qimin Jin, IEEE Electron Device Letters Semiconductor TechnologyElectrical EngineeringEngineeringNanoelectronicsElectronic Engineering	2022	22
Mobility enhancement in heavily doped 4H-SiC (0001), (1120), and (1100) MOSFETs via an oxidation-minimizing process Keita Tachiki, Kyota Mikami, Kōji Itō, Applied Physics Express	2022	21
Electron mobility along 〈0001〉 and 〈1100〉 directions in 4H-SiC over a wide range of donor concentration and temperature Ryoya Ishikawa, Masahiro Hara, Hajime Tanaka, Applied Physics Express	2021	19
Tunneling Current in 4H-SiC p-n Junction Diodes Mitsuaki Kaneko, Xilun Chi, Tsunenobu Kimoto IEEE Transactions on Electron Devices Phonon-assisted TunnelingElectrical EngineeringEngineeringNanoelectronicsApplied Physics	2020	18

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