F. Portuese

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Publications

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Active since

2005

Affiliations

Institute for Microelectronics and Microsystems(Current)

University of Catania

Consorzio Roma Ricerche

F. Portuese is an author at Institute for Microelectronics and Microsystems specializing in engineering, semiconductor device materials, and epitaxial growth.

Publications per year

2005–2007

Publications

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

Stefano Leone, Marco Mauceri, Giuseppe Pistone et al. · Materials science forum · 2006 · 29 citations · Full text

Engineering, Materials Engineering, Materials Science +17

High growth rate process in a SiC horizontal CVD reactor using HCl

Francesco La Via, G. Galvagno, Fabrizio Roccaforte et al. · Microelectronic Engineering · 2005 · 24 citations

Engineering, Chemical Engineering, Materials Engineering +7

Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

Francesco La Via, G. Galvagno, Andrea Firrincieli et al. · Materials science forum · 2006 · 15 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

Very High Growth Rate Epitaxy Processes with Chlorine Addition

Francesco La Via, Stefano Leone, Marco Mauceri et al. · Materials science forum · 2007 · 15 citations · Full text

Engineering, Electrical Engineering, Materials Science +17

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