H. Yoshida - Concepedia

Author

H. Yoshida

Tohoku University ORCID

Also Known As

H Yoshida, H. Yoshida, Hayato YOSHIDA, Hayato Yoshida

Publications

237

Citations

H-Index

Concepts

All Affiliations

Tohoku University The University of Tokyo

About

H. Yoshida is an author at Tohoku University specializing in engineering, condensed matter physics, and applied physics.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	4	4	63
2	Applied Physics	3	3	46
3	Medicine	1	1	23
4	Natural Sciences	1	1	20
5	Chemistry	1	1	20

H. Yoshida

Publications

156

Citations

H-Index

Page 1

	Year	Citations
Arsenite and arsenate activate extracellular signal-regulated kinases 1/2 by an epidermal growth factor receptor-mediated pathway in normal human keratinocytes Toshiko Tanaka‐Kagawa, Nobumitsu Hanioka, H. Yoshida, British Journal of Dermatology	2003	37
Serum ?2 microglobulin (?2MG) level is a potential predictor for encapsulating peritoneal sclerosis (EPS) in peritoneal dialysis patients Keitaro Yokoyama, H. Yoshida, Nanae Matsuo, Clinical Nephrology	2008	33
Cytoplasmic antineutrophil cytoplasmic antibody positive pauci-immune glomerulonephritis associated with infectious endocarditis N Kishimoto, Yojiro Mori, Hideki Yamahara, Clinical Nephrology Glomerular DiseaseVasculitisImmunologyPathologySteroid Therapy	2006	23
Hopping Conductivity in CuIr<sub>2</sub>S<sub>4</sub> Spinel Compound: I. Empirical Model for Electronic Configuration and Mechanism of Metal–Insulator Transition Kazuyuki Yagasaki, Takao Nakama, Masato Hedo, Journal of the Physical Society of Japan EngineeringSolid-state ChemistryChemistryElectronic StructureCharge Transport	2006	20
Structural and electrical properties of Cr1−Ru Sb2 Takashi Harada, T. Kanomata, Yasuo Takahashi, Journal of Alloys and Compounds Materials EngineeringMaterials ScienceTransition Metal ChalcogenidesMaterial AnalysisEngineering	2004	17
Thermoelectric Properties of Boron and Boron Phosphide Film Y. Kumashiro, Takashi Yokoyama, J. Nakahura, MRS Proceedings EngineeringPhysicsApplied PhysicsCondensed Matter PhysicsThermoelectric Material	1992	14
Hf layer thickness dependence of resistive switching characteristics of Ti/Hf/HfO<sub>2</sub>/Au resistive random access memory device Ryo Nakajima, Atsushi Azuma, H. Yoshida, Japanese Journal of Applied Physics Materials ScienceNon-volatile MemoryElectrical EngineeringElectronic DevicesHfo2 Layer	2018	12

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