β- Ga 2 O 3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD

Qiong Cao, Linan He, Hongdi Xiao, +3

Materials Science in Semiconductor Processing

Materials ScienceMaterials EngineeringEngineeringEpitaxial FilmsO 3 +6

Characterization of single crystal β-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD

Di Wang, Linan He, Yong Le, +4

Ceramics International

Materials ScienceOxide HeterostructuresEngineeringOxide ElectronicsSurface Science +6

Effect of annealing on the structural and optical properties of β-Ga2O3 films prepared on gadolinium gallium garnet (110) by MOCVD

Qiong Cao, Linan He, Xianjin Feng, +2

Ceramics International

Materials ScienceOptical MaterialsEngineeringOptical PropertiesOxide Electronics +5

Deposition and characterization of epitaxial Ta-doped TiO2 films for ultraviolet photoelectric detectors

Wei Zhao, Linan He, Xianjin Feng, +3

Ceramics International

Materials SciencePhotoelectric SensorEngineeringOxide ElectronicsApplied Physics +5

UV–vis transparent conducting Ta-doped SnO2 epitaxial films grown by metal-organic chemical vapor deposition

Linan He, Caìna Luan, Xianjin Feng, +4

Materials Research Bulletin

Materials ScienceEngineeringOxide ElectronicsUv–vis TransparentApplied Physics +5

Fabrication and optoelectronic properties of Ga2O3/Eu epitaxial films on nanoporous GaN distributed Bragg reflectors

Xiaokun Yang, Xuejian Du, Linan He, +5

Journal of Materials Science

Materials ScienceElectrical EngineeringOptical MaterialsEngineeringOptical Properties +10

Structural, photoelectrical and photoluminescence properties of Ta-doped SnO2 monocrystal films grown on MgF2 (110) substrates

Linan He, Caìna Luan, Xianjin Feng, +4

Ceramics International

Materials ScienceEngineeringNanotechnologyOxide ElectronicsMagnesium-based Composite +2

Fabrication and characterization of ultraviolet detector based on epitaxial Ta-doped Zn2SnO4 films

Linan He, Di Wang, Xiaochen Ma, +4

Optical Materials

Materials ScienceIi-vi SemiconductorPhotoelectric SensorEngineeringOptical Properties +5

Preparation and characterization of transparent indium- doped TiO 2 films deposited by MOCVD

Wei Zhao, Weiguang Wang, Xianjin Feng, +4

Ceramics International

Materials ScienceEngineeringOxide ElectronicsApplied PhysicsTio 2 +4

Preparation and properties of heteroepitaxial β-Ga2O3 films on KTaO3 (100) substrates by MOCVD

Di Wang, Linan He, Xiaochen Ma, +3

Materials Characterization

Oxide HeterostructuresMaterials EngineeringMaterials ScienceEngineeringHeteroepitaxial β-Ga2o3 Films +6