Surface electronic structure of plasma-treated indium tin oxides

H.Y. Yu, Xianjin Feng, D. Grozea, +4

Applied Physics Letters

Materials ScienceSurface CharacterizationPlasma ElectronicsEngineeringPhysics +10

Preparation and characterization of Sn-doped β-Ga2O3 homoepitaxial films by MOCVD

Xuejian Du, Zhao Li, Caìna Luan, +5

Journal of Materials Science

Materials EngineeringMaterials ScienceEngineeringOxide ElectronicsApplied Physics +5

Influence of the indium tin oxide/organic interface on open-circuit voltage, recombination, and cell degradation in organic small-molecule solar cells

Stefan Schäfer, Andreas Petersen, Thomas Wagner, +8

Physical Review B

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A Facile and Effective Method for Patching Sulfur Vacancies of WS₂ via Nitrogen Plasma Treatment

Jianfeng Jiang, Qinghua Zhang, Aizhu Wang, +8

Small

Ultraviolet–green photoluminescence of β-Ga2O3 films deposited on MgAl6O10 (100) substrate

Wei Mi, Caìna Luan, Zhao Li, +3

Optical Materials

Materials SciencePhotoluminescenceEngineeringPhotochemistryOptical Properties +5

Stable InSe transistors with high-field effect mobility for reliable nerve signal sensing

Jianfeng Jiang, Jingxin Li, Yutao Li, +11

npj 2D Materials and Applications

Hole Transfer Originating from Weakly Bound Exciton Dissociation in Acceptor–Donor–Acceptor Nonfullerene Organic Solar Cells

Meng-Si Niu, Kangwei Wang, Xiaoyu Yang, +7

The Journal of Physical Chemistry Letters

β- Ga 2 O 3 epitaxial films deposited on epi-GaN/sapphire (0001) substrates by MOCVD

Qiong Cao, Linan He, Hongdi Xiao, +3

Materials Science in Semiconductor Processing

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Characterization of single crystal β-Ga2O3 films grown on SrTiO3 (100) substrates by MOCVD

Di Wang, Linan He, Yong Le, +4

Ceramics International

Materials ScienceOxide HeterostructuresEngineeringOxide ElectronicsSurface Science +6

Construction of High Field-Effect Mobility Multilayer MoS₂ Field-Effect Transistors with Excellent Stability through Interface Engineering

Jianfeng Jiang, Yu Zhang, Aizhu Wang, +7

ACS Applied Electronic Materials

EngineeringTwo-dimensional MaterialsSemiconductor DeviceSemiconductorsNanoelectronics +14